Manipulation of the electrical and memory properties of MoS(2) field-effect transistors by highly charged ion irradiation

Field-effect transistors based on molybdenum disulfide (MoS(2)) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS(2) lattice or in the unde...

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Detalles Bibliográficos
Autores principales: Sleziona, Stephan, Pelella, Aniello, Faella, Enver, Kharsah, Osamah, Skopinski, Lucia, Maas, André, Liebsch, Yossarian, Schmeink, Jennifer, Di Bartolomeo, Antonio, Schleberger, Marika
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10696994/
http://dx.doi.org/10.1039/d3na00543g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10696994/
http://dx.doi.org/10.1039/d3na00543g

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