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Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure

In voltage-gated K(+) channels (Kv), membrane depolarization promotes a structural reorganization of each of the four voltage sensor domains surrounding the conducting pore, inducing its opening. Although the crystal structure of Kv1.2 provided the first atomic resolution view of a eukaryotic Kv cha...

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Autores principales: Lewis, Anthony, Jogini, Vishwanath, Blachowicz, Lydia, Lainé, Muriel, Roux, Benoît
Formato: Texto
Lenguaje:English
Publicado: The Rockefeller University Press 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2391244/
https://www.ncbi.nlm.nih.gov/pubmed/18504314
http://dx.doi.org/10.1085/jgp.200809962
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author Lewis, Anthony
Jogini, Vishwanath
Blachowicz, Lydia
Lainé, Muriel
Roux, Benoît
author_facet Lewis, Anthony
Jogini, Vishwanath
Blachowicz, Lydia
Lainé, Muriel
Roux, Benoît
author_sort Lewis, Anthony
collection PubMed
description In voltage-gated K(+) channels (Kv), membrane depolarization promotes a structural reorganization of each of the four voltage sensor domains surrounding the conducting pore, inducing its opening. Although the crystal structure of Kv1.2 provided the first atomic resolution view of a eukaryotic Kv channel, several components of the voltage sensors remain poorly resolved. In particular, the position and orientation of the charged arginine side chains in the S4 transmembrane segments remain controversial. Here we investigate the proximity of S4 and the pore domain in functional Kv1.2 channels in a native membrane environment using electrophysiological analysis of intersubunit histidine metallic bridges formed between the first arginine of S4 (R294) and residues A351 or D352 of the pore domain. We show that histidine pairs are able to bind Zn(2+) or Cd(2+) with high affinity, demonstrating their close physical proximity. The results of molecular dynamics simulations, consistent with electrophysiological data, indicate that the position of the S4 helix in the functional open-activated state could be shifted by ∼7–8 Å and rotated counterclockwise by 37° along its main axis relative to its position observed in the Kv1.2 x-ray structure. A structural model is provided for this conformation. The results further highlight the dynamic and flexible nature of the voltage sensor.
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spelling pubmed-23912442008-12-01 Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure Lewis, Anthony Jogini, Vishwanath Blachowicz, Lydia Lainé, Muriel Roux, Benoît J Gen Physiol Articles In voltage-gated K(+) channels (Kv), membrane depolarization promotes a structural reorganization of each of the four voltage sensor domains surrounding the conducting pore, inducing its opening. Although the crystal structure of Kv1.2 provided the first atomic resolution view of a eukaryotic Kv channel, several components of the voltage sensors remain poorly resolved. In particular, the position and orientation of the charged arginine side chains in the S4 transmembrane segments remain controversial. Here we investigate the proximity of S4 and the pore domain in functional Kv1.2 channels in a native membrane environment using electrophysiological analysis of intersubunit histidine metallic bridges formed between the first arginine of S4 (R294) and residues A351 or D352 of the pore domain. We show that histidine pairs are able to bind Zn(2+) or Cd(2+) with high affinity, demonstrating their close physical proximity. The results of molecular dynamics simulations, consistent with electrophysiological data, indicate that the position of the S4 helix in the functional open-activated state could be shifted by ∼7–8 Å and rotated counterclockwise by 37° along its main axis relative to its position observed in the Kv1.2 x-ray structure. A structural model is provided for this conformation. The results further highlight the dynamic and flexible nature of the voltage sensor. The Rockefeller University Press 2008-06 /pmc/articles/PMC2391244/ /pubmed/18504314 http://dx.doi.org/10.1085/jgp.200809962 Text en © 2008 Lewis et al. This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.jgp.org/misc/terms.shtml). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/).
spellingShingle Articles
Lewis, Anthony
Jogini, Vishwanath
Blachowicz, Lydia
Lainé, Muriel
Roux, Benoît
Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title_full Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title_fullStr Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title_full_unstemmed Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title_short Atomic Constraints between the Voltage Sensor and the Pore Domain in a Voltage-gated K(+) Channel of Known Structure
title_sort atomic constraints between the voltage sensor and the pore domain in a voltage-gated k(+) channel of known structure
topic Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2391244/
https://www.ncbi.nlm.nih.gov/pubmed/18504314
http://dx.doi.org/10.1085/jgp.200809962
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