Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}...

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Detalles Bibliográficos
Autores principales: Rubel, Oleg, Baranovskii, Sergei D.
Formato: Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2009
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2801988/
https://www.ncbi.nlm.nih.gov/pubmed/20054465
http://dx.doi.org/10.3390/ijms10125104

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2801988/
https://www.ncbi.nlm.nih.gov/pubmed/20054465
http://dx.doi.org/10.3390/ijms10125104

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