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A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10(18)cm(−3...

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Detalles Bibliográficos
Autores principales: Kanungo, PratyushDas, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893778/
https://www.ncbi.nlm.nih.gov/pubmed/20651924
http://dx.doi.org/10.1007/s11671-009-9472-x