A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10(18)cm(−3...

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Detalles Bibliográficos
Autores principales: Kanungo, PratyushDas, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893778/
https://www.ncbi.nlm.nih.gov/pubmed/20651924
http://dx.doi.org/10.1007/s11671-009-9472-x
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author Kanungo, PratyushDas
Kögler, Reinhard
Werner, Peter
Gösele, Ulrich
Skorupa, Wolfgang
author_facet Kanungo, PratyushDas
Kögler, Reinhard
Werner, Peter
Gösele, Ulrich
Skorupa, Wolfgang
author_sort Kanungo, PratyushDas
collection PubMed
description We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10(18)cm(−3)), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 10(19) cm(−3). Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.
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spelling pubmed-28937782010-07-21 A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping Kanungo, PratyushDas Kögler, Reinhard Werner, Peter Gösele, Ulrich Skorupa, Wolfgang Nanoscale Res Lett Nano Express We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10(18)cm(−3)), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 10(19) cm(−3). Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires. Springer 2009-11-08 /pmc/articles/PMC2893778/ /pubmed/20651924 http://dx.doi.org/10.1007/s11671-009-9472-x Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Kanungo, PratyushDas
Kögler, Reinhard
Werner, Peter
Gösele, Ulrich
Skorupa, Wolfgang
A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title_full A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title_fullStr A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title_full_unstemmed A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title_short A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
title_sort novel method to fabricate silicon nanowire p–n junctions by a combination of ion implantation and in-situ doping
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893778/
https://www.ncbi.nlm.nih.gov/pubmed/20651924
http://dx.doi.org/10.1007/s11671-009-9472-x
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