High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFET...

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Detalles Bibliográficos
Autores principales: Navi, K, Rashtian, M, Khatir, A, Keshavarzian, P, Hashemipour, O
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893825/
https://www.ncbi.nlm.nih.gov/pubmed/20671796
http://dx.doi.org/10.1007/s11671-010-9575-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893825/
https://www.ncbi.nlm.nih.gov/pubmed/20671796
http://dx.doi.org/10.1007/s11671-010-9575-4

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