High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFET...

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Detalles Bibliográficos
Autores principales: Navi, K, Rashtian, M, Khatir, A, Keshavarzian, P, Hashemipour, O
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893825/
https://www.ncbi.nlm.nih.gov/pubmed/20671796
http://dx.doi.org/10.1007/s11671-010-9575-4
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author Navi, K
Rashtian, M
Khatir, A
Keshavarzian, P
Hashemipour, O
author_facet Navi, K
Rashtian, M
Khatir, A
Keshavarzian, P
Hashemipour, O
author_sort Navi, K
collection PubMed
description Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.
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spelling pubmed-28938252010-07-28 High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder Navi, K Rashtian, M Khatir, A Keshavarzian, P Hashemipour, O Nanoscale Res Lett Nano Express Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD. Springer 2010-03-18 /pmc/articles/PMC2893825/ /pubmed/20671796 http://dx.doi.org/10.1007/s11671-010-9575-4 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Navi, K
Rashtian, M
Khatir, A
Keshavarzian, P
Hashemipour, O
High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title_full High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title_fullStr High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title_full_unstemmed High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title_short High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
title_sort high speed capacitor-inverter based carbon nanotube full adder
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893825/
https://www.ncbi.nlm.nih.gov/pubmed/20671796
http://dx.doi.org/10.1007/s11671-010-9575-4
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AT khatira highspeedcapacitorinverterbasedcarbonnanotubefulladder
AT keshavarzianp highspeedcapacitorinverterbasedcarbonnanotubefulladder
AT hashemipouro highspeedcapacitorinverterbasedcarbonnanotubefulladder

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