Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plas...

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Detalles Bibliográficos
Autores principales: Wei, Tongbo, Hu, Qiang, Duan, Ruifei, Wang, Junxi, Zeng, Yiping, Li, Jinmin, Yang, Yang, Liu, Yulong
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893916/
https://www.ncbi.nlm.nih.gov/pubmed/20596453
http://dx.doi.org/10.1007/s11671-009-9310-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893916/
https://www.ncbi.nlm.nih.gov/pubmed/20596453
http://dx.doi.org/10.1007/s11671-009-9310-1

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