Surface Localization of Buried III–V Semiconductor Nanostructures

In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the ca...

Descripción completa

Detalles Bibliográficos
Autores principales: Alonso-González, P, González, L, Fuster, D, Martín-Sánchez, J, González, Yolanda
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893929/
https://www.ncbi.nlm.nih.gov/pubmed/20596455
http://dx.doi.org/10.1007/s11671-009-9329-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893929/
https://www.ncbi.nlm.nih.gov/pubmed/20596455
http://dx.doi.org/10.1007/s11671-009-9329-3

Ejemplares similares