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Surface Localization of Buried III–V Semiconductor Nanostructures
In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the ca...
| Autores principales: | , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2009
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893929/ https://www.ncbi.nlm.nih.gov/pubmed/20596455 http://dx.doi.org/10.1007/s11671-009-9329-3 |