Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode. Unlike the traditional tetragonal distortion approach, strain due to the lattice mismatch is spontaneously relieved at the heteroint...

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Detalles Bibliográficos
Autores principales: Jallipalli, A, Balakrishnan, G, Huang, SH, Rotter, TJ, Nunna, K, Liang, BL, Dawson, LR, Huffaker, DL
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894098/
https://www.ncbi.nlm.nih.gov/pubmed/20652143
http://dx.doi.org/10.1007/s11671-009-9420-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894098/
https://www.ncbi.nlm.nih.gov/pubmed/20652143
http://dx.doi.org/10.1007/s11671-009-9420-9

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