A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration

The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial...

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Detalles Bibliográficos
Autores principales: Zang, KeYan, Cheong, DavyWC, Liu, HongFei, Liu, Hong, Teng, JingHua, Chua, SooJin
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894159/
https://www.ncbi.nlm.nih.gov/pubmed/20672057
http://dx.doi.org/10.1007/s11671-010-9601-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894159/
https://www.ncbi.nlm.nih.gov/pubmed/20672057
http://dx.doi.org/10.1007/s11671-010-9601-6

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