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A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial...
| Autores principales: | , , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894159/ https://www.ncbi.nlm.nih.gov/pubmed/20672057 http://dx.doi.org/10.1007/s11671-010-9601-6 |