Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces

Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron micros...

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Detalles Bibliográficos
Autores principales: Sablon, KA, Wang, Zh M, Salamo, GJ, Zhou, Lin, Smith, David J
Formato: Texto
Lenguaje:English
Publicado: Springer 2008
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894181/
https://www.ncbi.nlm.nih.gov/pubmed/20596345
http://dx.doi.org/10.1007/s11671-008-9194-5
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author Sablon, KA
Wang, Zh M
Salamo, GJ
Zhou, Lin
Smith, David J
author_facet Sablon, KA
Wang, Zh M
Salamo, GJ
Zhou, Lin
Smith, David J
author_sort Sablon, KA
collection PubMed
description Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.
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spelling pubmed-28941812010-06-30 Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces Sablon, KA Wang, Zh M Salamo, GJ Zhou, Lin Smith, David J Nanoscale Res Lett Nano Express Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures. Springer 2008-11-04 /pmc/articles/PMC2894181/ /pubmed/20596345 http://dx.doi.org/10.1007/s11671-008-9194-5 Text en Copyright ©2008 to the authors
spellingShingle Nano Express
Sablon, KA
Wang, Zh M
Salamo, GJ
Zhou, Lin
Smith, David J
Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title_full Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title_fullStr Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title_full_unstemmed Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title_short Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
title_sort structural evolution during formation and filling of self-patterned nanoholes on gaas (100) surfaces
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894181/
https://www.ncbi.nlm.nih.gov/pubmed/20596345
http://dx.doi.org/10.1007/s11671-008-9194-5
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