Pores in n-Type InP: A Model System for Electrochemical Pore Etching

The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtai...

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Detalles Bibliográficos
Autores principales: Leisner, Malte, Carstensen, Jürgen, Föll, Helmut
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894204/
https://www.ncbi.nlm.nih.gov/pubmed/20596354
http://dx.doi.org/10.1007/s11671-010-9624-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894204/
https://www.ncbi.nlm.nih.gov/pubmed/20596354
http://dx.doi.org/10.1007/s11671-010-9624-z

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