Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark s...

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Detalles Bibliográficos
Autores principales: Ngo, CY, Yoon, SF, Loke, WK, Cao, Q, Lim, DR, Wong, Vincent, Sim, YK, Chua, SJ
Formato: Texto
Lenguaje:English
Publicado: Springer 2008
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894240/
https://www.ncbi.nlm.nih.gov/pubmed/20596370
http://dx.doi.org/10.1007/s11671-008-9184-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894240/
https://www.ncbi.nlm.nih.gov/pubmed/20596370
http://dx.doi.org/10.1007/s11671-008-9184-7

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