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Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator
In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark s...
| Autores principales: | , , , , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2008
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894240/ https://www.ncbi.nlm.nih.gov/pubmed/20596370 http://dx.doi.org/10.1007/s11671-008-9184-7 |