Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

The morphology and transition thickness (t(c)) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andt(c)decreased when the thin InGaAs was used as a buffer layer instead of t...

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Detalles Bibliográficos
Autores principales: Wang, Lu, Li, Meicheng, Xiong, Min, Zhao, Liancheng
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894241/
https://www.ncbi.nlm.nih.gov/pubmed/20596311
http://dx.doi.org/10.1007/s11671-009-9304-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894241/
https://www.ncbi.nlm.nih.gov/pubmed/20596311
http://dx.doi.org/10.1007/s11671-009-9304-z

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