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Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
The morphology and transition thickness (t(c)) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andt(c)decreased when the thin InGaAs was used as a buffer layer instead of t...
| Autores principales: | , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2009
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894241/ https://www.ncbi.nlm.nih.gov/pubmed/20596311 http://dx.doi.org/10.1007/s11671-009-9304-z |