Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morph...

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Detalles Bibliográficos
Autores principales: Pezzoli, F, Merdzhanova, T, Rastelli, A, Schmidt, OG
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894314/
https://www.ncbi.nlm.nih.gov/pubmed/20596332
http://dx.doi.org/10.1007/s11671-009-9360-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894314/
https://www.ncbi.nlm.nih.gov/pubmed/20596332
http://dx.doi.org/10.1007/s11671-009-9360-4

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