Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morph...

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Detalles Bibliográficos
Autores principales: Pezzoli, F, Merdzhanova, T, Rastelli, A, Schmidt, OG
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894314/
https://www.ncbi.nlm.nih.gov/pubmed/20596332
http://dx.doi.org/10.1007/s11671-009-9360-4
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author Pezzoli, F
Merdzhanova, T
Rastelli, A
Schmidt, OG
author_facet Pezzoli, F
Merdzhanova, T
Rastelli, A
Schmidt, OG
author_sort Pezzoli, F
collection PubMed
description The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.
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spelling pubmed-28943142010-06-30 Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography Pezzoli, F Merdzhanova, T Rastelli, A Schmidt, OG Nanoscale Res Lett Nano Express The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing. Springer 2009-06-06 /pmc/articles/PMC2894314/ /pubmed/20596332 http://dx.doi.org/10.1007/s11671-009-9360-4 Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Pezzoli, F
Merdzhanova, T
Rastelli, A
Schmidt, OG
Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title_full Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title_fullStr Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title_full_unstemmed Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title_short Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
title_sort alloying and strain relaxation in sige islands grown on pit-patterned si(001) substrates probed by nanotomography
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894314/
https://www.ncbi.nlm.nih.gov/pubmed/20596332
http://dx.doi.org/10.1007/s11671-009-9360-4
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AT merdzhanovat alloyingandstrainrelaxationinsigeislandsgrownonpitpatternedsi001substratesprobedbynanotomography
AT rastellia alloyingandstrainrelaxationinsigeislandsgrownonpitpatternedsi001substratesprobedbynanotomography
AT schmidtog alloyingandstrainrelaxationinsigeislandsgrownonpitpatternedsi001substratesprobedbynanotomography

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