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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morph...
Autores principales: | Pezzoli, F, Merdzhanova, T, Rastelli, A, Schmidt, OG |
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Formato: | Texto |
Lenguaje: | English |
Publicado: |
Springer
2009
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894314/ https://www.ncbi.nlm.nih.gov/pubmed/20596332 http://dx.doi.org/10.1007/s11671-009-9360-4 |
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