Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the sam...

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Detalles Bibliográficos
Autores principales: Wang, Zhiming M, Xie, Yanze Z, Kunets, Vasyl P, Dorogan, Vitaliy G, Mazur, Yuriy I, Salamo, Gregory J
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897028/
https://www.ncbi.nlm.nih.gov/pubmed/20676193
http://dx.doi.org/10.1007/s11671-010-9645-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897028/
https://www.ncbi.nlm.nih.gov/pubmed/20676193
http://dx.doi.org/10.1007/s11671-010-9645-7

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