Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the sam...

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Detalles Bibliográficos
Autores principales: Wang, Zhiming M, Xie, Yanze Z, Kunets, Vasyl P, Dorogan, Vitaliy G, Mazur, Yuriy I, Salamo, Gregory J
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897028/
https://www.ncbi.nlm.nih.gov/pubmed/20676193
http://dx.doi.org/10.1007/s11671-010-9645-7
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author Wang, Zhiming M
Xie, Yanze Z
Kunets, Vasyl P
Dorogan, Vitaliy G
Mazur, Yuriy I
Salamo, Gregory J
author_facet Wang, Zhiming M
Xie, Yanze Z
Kunets, Vasyl P
Dorogan, Vitaliy G
Mazur, Yuriy I
Salamo, Gregory J
author_sort Wang, Zhiming M
collection PubMed
description Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.
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spelling pubmed-28970282010-07-29 Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates Wang, Zhiming M Xie, Yanze Z Kunets, Vasyl P Dorogan, Vitaliy G Mazur, Yuriy I Salamo, Gregory J Nanoscale Res Lett Nano Express Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved. Springer 2010-05-27 /pmc/articles/PMC2897028/ /pubmed/20676193 http://dx.doi.org/10.1007/s11671-010-9645-7 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Wang, Zhiming M
Xie, Yanze Z
Kunets, Vasyl P
Dorogan, Vitaliy G
Mazur, Yuriy I
Salamo, Gregory J
Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title_full Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title_fullStr Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title_full_unstemmed Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title_short Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
title_sort multilayers of ingaas nanostructures grown on gaas(210) substrates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897028/
https://www.ncbi.nlm.nih.gov/pubmed/20676193
http://dx.doi.org/10.1007/s11671-010-9645-7
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