Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, JM, Liu, XL, Xu, XQ, Wang, J, Li, CM, Wei, HY, Yang, SY, Zhu, QS, Fan, YM, Zhang, XW, Wang, ZG
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897041/
https://www.ncbi.nlm.nih.gov/pubmed/20676206
http://dx.doi.org/10.1007/s11671-010-9650-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2897041/
https://www.ncbi.nlm.nih.gov/pubmed/20676206
http://dx.doi.org/10.1007/s11671-010-9650-x

Ejemplares similares