Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(21...

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Detalles Bibliográficos
Autores principales: Zhang, X, Dubrovskii, VG, Sibirev, NV, Cirlin, GE, Sartel, C, Tchernycheva, M, Harmand, JC, Glas, F
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956022/
https://www.ncbi.nlm.nih.gov/pubmed/21076695
http://dx.doi.org/10.1007/s11671-010-9698-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956022/
https://www.ncbi.nlm.nih.gov/pubmed/21076695
http://dx.doi.org/10.1007/s11671-010-9698-7

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