Fabrication of Coaxial Si(1−x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions

We report on bifurcate reactions on the surface of well-aligned Si(1−x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1−x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth...

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Detalles Bibliográficos
Autores principales: Kim, Ilsoo, Lee, Ki-Young, Kim, Ungkil, Park, Yong-Hee, Park, Tae-Eon, Choi, Heon-Jin
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956027/
https://www.ncbi.nlm.nih.gov/pubmed/21076699
http://dx.doi.org/10.1007/s11671-010-9673-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956027/
https://www.ncbi.nlm.nih.gov/pubmed/21076699
http://dx.doi.org/10.1007/s11671-010-9673-3

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