The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck...

Descripción completa

Detalles Bibliográficos
Autores principales: Jang, Moongyu, Park, Youngsam, Jun, Myungsim, Hyun, Younghoon, Choi, Sung-Jin, Zyung, Taehyoung
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956042/
https://www.ncbi.nlm.nih.gov/pubmed/21076666
http://dx.doi.org/10.1007/s11671-010-9690-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956042/
https://www.ncbi.nlm.nih.gov/pubmed/21076666
http://dx.doi.org/10.1007/s11671-010-9690-2

Ejemplares similares