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The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process
Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck...
| Autores principales: | , , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956042/ https://www.ncbi.nlm.nih.gov/pubmed/21076666 http://dx.doi.org/10.1007/s11671-010-9690-2 |