Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus...

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Detalles Bibliográficos
Autores principales: Di Bartolomeo, A, Yang, Y, Rinzan, MBM, Boyd, AK, Barbara, P
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964474/
https://www.ncbi.nlm.nih.gov/pubmed/21124628
http://dx.doi.org/10.1007/s11671-010-9727-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964474/
https://www.ncbi.nlm.nih.gov/pubmed/21124628
http://dx.doi.org/10.1007/s11671-010-9727-6

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