Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus...

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Detalles Bibliográficos
Autores principales: Di Bartolomeo, A, Yang, Y, Rinzan, MBM, Boyd, AK, Barbara, P
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964474/
https://www.ncbi.nlm.nih.gov/pubmed/21124628
http://dx.doi.org/10.1007/s11671-010-9727-6
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author Di Bartolomeo, A
Yang, Y
Rinzan, MBM
Boyd, AK
Barbara, P
author_facet Di Bartolomeo, A
Yang, Y
Rinzan, MBM
Boyd, AK
Barbara, P
author_sort Di Bartolomeo, A
collection PubMed
description We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
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spelling pubmed-29644742010-11-29 Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell Di Bartolomeo, A Yang, Y Rinzan, MBM Boyd, AK Barbara, P Nanoscale Res Lett Nano Express We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum. Springer 2010-08-14 /pmc/articles/PMC2964474/ /pubmed/21124628 http://dx.doi.org/10.1007/s11671-010-9727-6 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Di Bartolomeo, A
Yang, Y
Rinzan, MBM
Boyd, AK
Barbara, P
Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title_full Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title_fullStr Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title_full_unstemmed Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title_short Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
title_sort record endurance for single-walled carbon nanotube–based memory cell
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964474/
https://www.ncbi.nlm.nih.gov/pubmed/21124628
http://dx.doi.org/10.1007/s11671-010-9727-6
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AT rinzanmbm recordenduranceforsinglewalledcarbonnanotubebasedmemorycell
AT boydak recordenduranceforsinglewalledcarbonnanotubebasedmemorycell
AT barbarap recordenduranceforsinglewalledcarbonnanotubebasedmemorycell

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