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Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus...
| Autores principales: | , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964474/ https://www.ncbi.nlm.nih.gov/pubmed/21124628 http://dx.doi.org/10.1007/s11671-010-9727-6 |