High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the...

Descripción completa

Detalles Bibliográficos
Autores principales: Choi, Chang-Young, Lee, Ji-Hoon, Koh, Jung-Hyuk, Ha, Jae-Geun, Koo, Sang-Mo, Kim, Sangsig
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964476/
https://www.ncbi.nlm.nih.gov/pubmed/21124629
http://dx.doi.org/10.1007/s11671-010-9714-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964476/
https://www.ncbi.nlm.nih.gov/pubmed/21124629
http://dx.doi.org/10.1007/s11671-010-9714-y

Ejemplares similares