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High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the...
| Autores principales: | , , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964476/ https://www.ncbi.nlm.nih.gov/pubmed/21124629 http://dx.doi.org/10.1007/s11671-010-9714-y |