Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN...

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Detalles Bibliográficos
Autores principales: Lin, Meng-Hung, Wen, Hua-Chiang, Jeng, Yeau-Ren, Chou, Chang-Pin
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964479/
https://www.ncbi.nlm.nih.gov/pubmed/21124631
http://dx.doi.org/10.1007/s11671-010-9717-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964479/
https://www.ncbi.nlm.nih.gov/pubmed/21124631
http://dx.doi.org/10.1007/s11671-010-9717-8

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