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Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN...
| Autores principales: | , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2964479/ https://www.ncbi.nlm.nih.gov/pubmed/21124631 http://dx.doi.org/10.1007/s11671-010-9717-8 |