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Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication proc...

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Detalles Bibliográficos
Autores principales: Toujyou, Takashi, Tsukamoto, Shiro
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991147/
https://www.ncbi.nlm.nih.gov/pubmed/21170138
http://dx.doi.org/10.1007/s11671-010-9802-z