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Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication proc...
| Autores principales: | , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991147/ https://www.ncbi.nlm.nih.gov/pubmed/21170138 http://dx.doi.org/10.1007/s11671-010-9802-z |