Cargando…
Morphology Analysis of Si Island Arrays on Si(001)
The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent re...
| Autores principales: | , , , , |
|---|---|
| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991161/ https://www.ncbi.nlm.nih.gov/pubmed/21170139 http://dx.doi.org/10.1007/s11671-010-9725-8 |