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Morphology Analysis of Si Island Arrays on Si(001)

The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent re...

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Detalles Bibliográficos
Autores principales:	González-González, A, Alonso, M, Navarro, E, Sacedón, JL, Ruiz, A
Formato:	Texto
Lenguaje:	English
Publicado:	Springer 2010
Materias:	Special Issue Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991161/ https://www.ncbi.nlm.nih.gov/pubmed/21170139 http://dx.doi.org/10.1007/s11671-010-9725-8

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