In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multiface...

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Detalles Bibliográficos
Autores principales: Sanduijav, B, Springholz, G
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991170/
https://www.ncbi.nlm.nih.gov/pubmed/21170141
http://dx.doi.org/10.1007/s11671-010-9814-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991170/
https://www.ncbi.nlm.nih.gov/pubmed/21170141
http://dx.doi.org/10.1007/s11671-010-9814-8

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