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Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect...
| Autores principales: | , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991171/ https://www.ncbi.nlm.nih.gov/pubmed/21170391 http://dx.doi.org/10.1007/s11671-010-9818-4 |