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Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect...

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Detalles Bibliográficos
Autores principales: Ferragut, R, Calloni, A, Dupasquier, A, Isella, G
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991171/
https://www.ncbi.nlm.nih.gov/pubmed/21170391
http://dx.doi.org/10.1007/s11671-010-9818-4
_version_ 1782192558074494976
author Ferragut, R
Calloni, A
Dupasquier, A
Isella, G
author_facet Ferragut, R
Calloni, A
Dupasquier, A
Isella, G
author_sort Ferragut, R
collection PubMed
description The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO(2)/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.
format Text
id pubmed-2991171
institution National Center for Biotechnology Information
language English
publishDate 2010
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-29911712010-12-15 Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation Ferragut, R Calloni, A Dupasquier, A Isella, G Nanoscale Res Lett Special Issue Article The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO(2)/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films. Springer 2010-10-24 /pmc/articles/PMC2991171/ /pubmed/21170391 http://dx.doi.org/10.1007/s11671-010-9818-4 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Ferragut, R
Calloni, A
Dupasquier, A
Isella, G
Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title_full Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title_fullStr Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title_full_unstemmed Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title_short Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
title_sort defect characterization in sige/soi epitaxial semiconductors by positron annihilation
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991171/
https://www.ncbi.nlm.nih.gov/pubmed/21170391
http://dx.doi.org/10.1007/s11671-010-9818-4
work_keys_str_mv AT ferragutr defectcharacterizationinsigesoiepitaxialsemiconductorsbypositronannihilation
AT callonia defectcharacterizationinsigesoiepitaxialsemiconductorsbypositronannihilation
AT dupasquiera defectcharacterizationinsigesoiepitaxialsemiconductorsbypositronannihilation
AT isellag defectcharacterizationinsigesoiepitaxialsemiconductorsbypositronannihilation