Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe...

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Detalles Bibliográficos
Autores principales: Vanacore, GiovanniMaria, Zani, Maurizio, Bollani, Monica, Colombo, Davide, Isella, Giovanni, Osmond, Johann, Sordan, Roman, Tagliaferri, Alberto
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991199/
https://www.ncbi.nlm.nih.gov/pubmed/21170398
http://dx.doi.org/10.1007/s11671-010-9781-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991199/
https://www.ncbi.nlm.nih.gov/pubmed/21170398
http://dx.doi.org/10.1007/s11671-010-9781-0

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