Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microsco...

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Detalles Bibliográficos
Autores principales: Hakkarainen, Teemu, Schramm, Andreas, Tukiainen, Antti, Ahorinta, Risto, Toikkanen, Lauri, Guina, Mircea
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991205/
https://www.ncbi.nlm.nih.gov/pubmed/21170401
http://dx.doi.org/10.1007/s11671-010-9747-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991205/
https://www.ncbi.nlm.nih.gov/pubmed/21170401
http://dx.doi.org/10.1007/s11671-010-9747-2

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