Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microsco...

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Autores principales: Hakkarainen, Teemu, Schramm, Andreas, Tukiainen, Antti, Ahorinta, Risto, Toikkanen, Lauri, Guina, Mircea
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991205/
https://www.ncbi.nlm.nih.gov/pubmed/21170401
http://dx.doi.org/10.1007/s11671-010-9747-2
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author Hakkarainen, Teemu
Schramm, Andreas
Tukiainen, Antti
Ahorinta, Risto
Toikkanen, Lauri
Guina, Mircea
author_facet Hakkarainen, Teemu
Schramm, Andreas
Tukiainen, Antti
Ahorinta, Risto
Toikkanen, Lauri
Guina, Mircea
author_sort Hakkarainen, Teemu
collection PubMed
description We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.
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spelling pubmed-29912052010-12-15 Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP Hakkarainen, Teemu Schramm, Andreas Tukiainen, Antti Ahorinta, Risto Toikkanen, Lauri Guina, Mircea Nanoscale Res Lett Special Issue Article We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified. Springer 2010-08-20 /pmc/articles/PMC2991205/ /pubmed/21170401 http://dx.doi.org/10.1007/s11671-010-9747-2 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Hakkarainen, Teemu
Schramm, Andreas
Tukiainen, Antti
Ahorinta, Risto
Toikkanen, Lauri
Guina, Mircea
Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title_full Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title_fullStr Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title_full_unstemmed Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title_short Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
title_sort lateral ordering of inas quantum dots on cross-hatch patterned gainp
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991205/
https://www.ncbi.nlm.nih.gov/pubmed/21170401
http://dx.doi.org/10.1007/s11671-010-9747-2
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AT ahorintaristo lateralorderingofinasquantumdotsoncrosshatchpatternedgainp
AT toikkanenlauri lateralorderingofinasquantumdotsoncrosshatchpatternedgainp
AT guinamircea lateralorderingofinasquantumdotsoncrosshatchpatternedgainp

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