Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using d...

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Detalles Bibliográficos
Autores principales: Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991215/
https://www.ncbi.nlm.nih.gov/pubmed/21170403
http://dx.doi.org/10.1007/s11671-010-9731-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991215/
https://www.ncbi.nlm.nih.gov/pubmed/21170403
http://dx.doi.org/10.1007/s11671-010-9731-x

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