Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve selective nucleation and island homogeneity...

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Detalles Bibliográficos
Autores principales: Bergamaschini, R, Montalenti, F, Miglio, L
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991238/
https://www.ncbi.nlm.nih.gov/pubmed/21170413
http://dx.doi.org/10.1007/s11671-010-9723-x
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author Bergamaschini, R
Montalenti, F
Miglio, L
author_facet Bergamaschini, R
Montalenti, F
Miglio, L
author_sort Bergamaschini, R
collection PubMed
description We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process. The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated.
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spelling pubmed-29912382010-12-15 Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) Bergamaschini, R Montalenti, F Miglio, L Nanoscale Res Lett Special Issue Article We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period) able to influence the growth process. The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated. Springer 2010-08-06 /pmc/articles/PMC2991238/ /pubmed/21170413 http://dx.doi.org/10.1007/s11671-010-9723-x Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Bergamaschini, R
Montalenti, F
Miglio, L
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title_full Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title_fullStr Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title_full_unstemmed Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title_short Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
title_sort optimal growth conditions for selective ge islands positioning on pit-patterned si(001)
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991238/
https://www.ncbi.nlm.nih.gov/pubmed/21170413
http://dx.doi.org/10.1007/s11671-010-9723-x
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