Growth Mechanism of Self-Catalyzed Group III−V Nanowires

[Image: see text] Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While th...

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Detalles Bibliográficos
Autores principales: Mandl, Bernhard, Stangl, Julian, Hilner, Emelie, Zakharov, Alexei A., Hillerich, Karla, Dey, Anil W., Samuelson, Lars, Bauer, Günther, Deppert, Knut, Mikkelsen, Anders
Formato: Texto
Lenguaje:English
Publicado: American Chemical Society 2010
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3028567/
https://www.ncbi.nlm.nih.gov/pubmed/20939507
http://dx.doi.org/10.1021/nl1022699

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3028567/
https://www.ncbi.nlm.nih.gov/pubmed/20939507
http://dx.doi.org/10.1021/nl1022699

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