Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

In this work, the nucleation and growth of InAs nanowires on patterned SiO(2)/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO(2), where openings smaller than 180 nm lead to a substantial decrease in nucleation yield,...

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Detalles Bibliográficos
Autores principales: Mandl, Bernhard, Dey, Anil W., Stangl, Julian, Cantoro, Mirco, Wernersson, Lars-Erik, Bauer, Günther, Samuelson, Lars, Deppert, Knut, Thelander, Claes
Formato: Online Artículo Texto
Lenguaje:English
Publicado: North-Holland Pub. Co 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3191268/
https://www.ncbi.nlm.nih.gov/pubmed/22053114
http://dx.doi.org/10.1016/j.jcrysgro.2011.08.023

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3191268/
https://www.ncbi.nlm.nih.gov/pubmed/22053114
http://dx.doi.org/10.1016/j.jcrysgro.2011.08.023

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